Electrochemical characteristics of a self-propagating molecular-based assembly.
Identifieur interne : 001A18 ( Main/Exploration ); précédent : 001A17; suivant : 001A19Electrochemical characteristics of a self-propagating molecular-based assembly.
Auteurs : RBID : pubmed:20088551Abstract
The electrochemical properties of a metallosupramolecular network that undergoes reversible redox chemistry on indium-tin oxide (ITO)-coated glass substrates have been investigated. The redox-active osmium complexes are electrochemically accessible even for films with a thickness > 15 nm. The electrochemical data correlates well with our previously observed self-propagating growth process, for which the electron density for the assemblies remains constant during film growth. Electron-transfer rate constants obtained by potential step chronoamperometry experiments suggest an exceptionally low attenuation factor, β, of 0.013 ± 0.001 Å(-1). However, the intrinsically porous nature of the assembly could be to a large extent or even entirely responsible for such a low value.
DOI: 10.1021/jp910898f
PubMed: 20088551
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Electrochemical characteristics of a self-propagating molecular-based assembly.</title><author><name sortKey="Motiei, Leila" uniqKey="Motiei L">Leila Motiei</name><affiliation wicri:level="1"><nlm:affiliation>Department of Organic Chemistry, The Weizmann Institute of Science, 76100 Rehovot, Israel.</nlm:affiliation><country xml:lang="fr">Israël</country><wicri:regionArea>Department of Organic Chemistry, The Weizmann Institute of Science, 76100 Rehovot</wicri:regionArea></affiliation></author><author><name sortKey="Lahav, Michal" uniqKey="Lahav M">Michal Lahav</name></author><author><name sortKey="Gulino, Antonino" uniqKey="Gulino A">Antonino Gulino</name></author><author><name sortKey="Iron, Mark A" uniqKey="Iron M">Mark A Iron</name></author><author><name sortKey="Van Der Boom, Milko E" uniqKey="Van Der Boom M">Milko E van der Boom</name></author></titleStmt><publicationStmt><date when="2010">2010</date><idno type="doi">10.1021/jp910898f</idno><idno type="RBID">pubmed:20088551</idno><idno type="pmid">20088551</idno><idno type="wicri:Area/Main/Corpus">001B20</idno><idno type="wicri:Area/Main/Curation">001B20</idno><idno type="wicri:Area/Main/Exploration">001A18</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The electrochemical properties of a metallosupramolecular network that undergoes reversible redox chemistry on indium-tin oxide (ITO)-coated glass substrates have been investigated. The redox-active osmium complexes are electrochemically accessible even for films with a thickness > 15 nm. The electrochemical data correlates well with our previously observed self-propagating growth process, for which the electron density for the assemblies remains constant during film growth. Electron-transfer rate constants obtained by potential step chronoamperometry experiments suggest an exceptionally low attenuation factor, β, of 0.013 ± 0.001 Å(-1). However, the intrinsically porous nature of the assembly could be to a large extent or even entirely responsible for such a low value.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="PubMed-not-MEDLINE"><PMID Version="1">20088551</PMID><DateCreated><Year>2010</Year><Month>11</Month><Day>12</Day></DateCreated><DateCompleted><Year>2011</Year><Month>03</Month><Day>02</Day></DateCompleted><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1520-5207</ISSN><JournalIssue CitedMedium="Internet"><Volume>114</Volume><Issue>45</Issue><PubDate><Year>2010</Year><Month>Nov</Month><Day>18</Day></PubDate></JournalIssue><Title>The journal of physical chemistry. B</Title><ISOAbbreviation>J Phys Chem B</ISOAbbreviation></Journal><ArticleTitle>Electrochemical characteristics of a self-propagating molecular-based assembly.</ArticleTitle><Pagination><MedlinePgn>14283-6</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1021/jp910898f</ELocationID><Abstract><AbstractText>The electrochemical properties of a metallosupramolecular network that undergoes reversible redox chemistry on indium-tin oxide (ITO)-coated glass substrates have been investigated. The redox-active osmium complexes are electrochemically accessible even for films with a thickness > 15 nm. The electrochemical data correlates well with our previously observed self-propagating growth process, for which the electron density for the assemblies remains constant during film growth. Electron-transfer rate constants obtained by potential step chronoamperometry experiments suggest an exceptionally low attenuation factor, β, of 0.013 ± 0.001 Å(-1). However, the intrinsically porous nature of the assembly could be to a large extent or even entirely responsible for such a low value.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Motiei</LastName><ForeName>Leila</ForeName><Initials>L</Initials><Affiliation>Department of Organic Chemistry, The Weizmann Institute of Science, 76100 Rehovot, Israel.</Affiliation></Author><Author ValidYN="Y"><LastName>Lahav</LastName><ForeName>Michal</ForeName><Initials>M</Initials></Author><Author ValidYN="Y"><LastName>Gulino</LastName><ForeName>Antonino</ForeName><Initials>A</Initials></Author><Author ValidYN="Y"><LastName>Iron</LastName><ForeName>Mark A</ForeName><Initials>MA</Initials></Author><Author ValidYN="Y"><LastName>van der Boom</LastName><ForeName>Milko E</ForeName><Initials>ME</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2010</Year><Month>01</Month><Day>20</Day></ArticleDate></Article><MedlineJournalInfo><Country>United States</Country><MedlineTA>J Phys Chem B</MedlineTA><NlmUniqueID>101157530</NlmUniqueID><ISSNLinking>1520-5207</ISSNLinking></MedlineJournalInfo></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="aheadofprint"><Year>2010</Year><Month>1</Month><Day>20</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2010</Year><Month>1</Month><Day>22</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2010</Year><Month>1</Month><Day>22</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2010</Year><Month>1</Month><Day>22</Day><Hour>6</Hour><Minute>1</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="doi">10.1021/jp910898f</ArticleId><ArticleId IdType="pubmed">20088551</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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